wpt2e33 single, pnp, -30v, -3a, power transistor descriptions the wpt2e33 is pnp bipolar power transistor with very low saturation voltage. this device is suitable for use in charging circuit and other power management. standard product wpt2e33 is pb-free. features ultra low collector-to-emitter saturation voltage high dc current gain >100 3a continue collector current small package sot-89-3l. applications charging circuit power regulator other power management in portable equipments sot-89-3l pin configuration (top view) wpt2e33 yyww wpt2e33 = device code yy = year ww = week marking order information device package shipping wpt2e33-3/tr sot-89-3l 1 000/reel&tape 4 c c b e 1 2 3 1 2 3 4 1 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
absolute maximum ratings a surface mounted on fr-4 board using 1 square inch pad size, 1oz copper b surface mounted on fr-4 board using minimum pad size, 1oz copper c pulse width=300s, duty cycle<2% electronics characteristics (ta=25 o c, unless otherwise noted) parameter symbol value unit collector-emitter voltage v ceo -30 v collector-base voltage v cbo -30 v emitter-base voltage v ebo -6 v continues collector current a -3 a continues collector current b i c -2 a pulse collector current c i cm -6 a power dissipation a 3.0 w power dissipation b p d 1.5 w junction temperature t j 150 c lead temperature t l 260 c storage temperature range t stg -55~155 c parameter symbol test conditions min. typ. max. unit collector-emitter breakdown voltage bv ceo i c =-10ma, i b =0ma -30 v collector-base breakdown voltage bv cbo i c =-1ma, i e =0ma -30 v emitter-base breakdown voltage bv ebo i e =-100ua, i c =0ma -6 v collector cutoff current i cbo v cb =-30v -100 na emitter cutoff current i ebo v eb =-5v -100 na collector-emitter sa turation voltage c v ce(sat) i c =-2a, i b =-200ma -0.2 -0.4 v base-emitter satu ration voltage c v be(sat) i c =-2a, i b =-200ma -1.0 -1.5 v base-emitter forward voltage v be(on) i c =-0.5a, v ce =-2v -0.7 -1.0 v dc current gain c h fe i c =-1a , v ce =-2v 100 300 wpt2e33 2 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
typical characteristics (ta=25 o c, unless otherwise noted) output characteristics dc current gain power derating transfer characteristics c-e saturation voltage vs. collector current safe operating area transient thermal response (junction-to-ambient) 0 25 50 75 100 125 150 0 20 40 60 80 100 % of rated power or i pp ambient temperature( o c) 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 -5ma -10ma -20ma -30ma -40ma -50ma i c -collector current(a) v ce -collector to emitter voltage(v) 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1e-3 0.01 0.1 1 10 v ce =-2v ta=-45 o c ta=25 o c i c -collector current(a) v be -base to emitter voltage(v) ta=85 o c 1e-3 0.01 0.1 1 10 5 50 500 5000 ta=-45 o c ta=25 o c ta=85 o c h fe -dc current gain i c -collector current(a) 1e-3 0.01 0.1 1 10 1 10 100 1000 ta=25 o c ta=-45 o c v ce(sat) -collector saturation voltage(v) i c -collector current(a) ta=85 o c 10 0.01 0.1 1.0 10 100 0.1 1.0 100 s 1ms 10ms 100ms 1 s dc single pulse t a = 25 c collector to emitter voltage: v ce (v) collector current: i c (a) 10 -4 10 -3 10 -2 10 -1 600 100 10 1 square wave pulse duration (s) normalized transient thermal impedance z 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty = 0.5 1. duty cycle, d = 2. r thja = 42c/w 3. t jm - t a = p cm x z thja t 1 t 2 t 1 t 2 4. surface mounted p cm thja x rthja wpt2e33 3 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
package outline dimensions sot-89-3l dimensions in millimeters symbol min. max. a 1.400 1.600 b 0.320 0.520 b1 0.400 0.580 c 0.350 0.440 d 4.400 4.600 d1 1.550 ref. e 2.300 2.600 e1 3.940 4.250 e 1.500 typ. e1 3.000 typ. l 0.900 1.200 wpt2e33 4 of 4 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
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